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PD- 95338
IRLL2705PBF
Surface Mount l Dynamic dv/dt Rating l Logic-Level Gate Drive l Fast Switching l Ease of Paralleling l Advanced Process Technology l Ultra Low On-Resistance l Lead-Free Description
l
HEXFET(R) Power MOSFET
D
VDSS = 55V RDS(on) = 0.04
G
ID = 3.8A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application
SOT-223
Absolute Maximum Ratings
Parameter
ID @ TA = ID @ TA = ID @ TA = IDM PD @TA = PD @TA = VGS EAS IAR EAR dv/dt TJ, TSTG 25C 25C 70C 25C 25C Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
5.2 3.8 3.0 30 2.1 1.0 8.3 16 110 3.8 0.10 7.5 -55 to + 150
Units
A W W
mW/C
V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJA RJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)**
Typ.
93 48
Max.
120 60
Units
C/W
* When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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1
05/28/04
IRLL2705PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. 55 1.0 5.1
Typ. 0.061 32 3.5 9.7 6.2 12 35 22 870 220 92
Max. Units Conditions V V GS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.040 V GS = 10V, ID = 3.8A 0.051 VGS = 5.0V, ID = 3.8A 0.065 V GS = 4.0V, ID = 1.9A 2.0 V V DS = V GS, ID = 250A S V DS = 25V, ID = 1.9A 25 V DS = 55V, VGS = 0V A 250 V DS = 44V, VGS = 0V, TJ = 150C 100 VGS = 16V nA -100 V GS = -16V 48 ID = 3.8A 5.3 nC V DS = 44V 14 V GS = 10V, See Fig. 6 and 9 V DD = 28V ID = 3.8A ns RG = 6.2 RD = 7.1, See Fig. 10 V GS = 0V pF V DS = 25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol 0.91 showing the A integral reverse 30 p-n junction diode. 1.3 V TJ = 25C, IS = 3.8A, VGS = 0V 58 88 ns TJ = 25C, I F = 3.8A 140 210 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD 3.8A, di/dt 220A/s, VDD V(BR)DSS,
TJ 150C
VDD = 25V, starting TJ = 25C, L = 15mH
RG = 25, I AS = 3.8A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
2
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IRLL2705PBF
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
100
I D , Drain-to-Source Current (A)
10
I D, Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
10
3.0V
3.0V
1 0.1 1
20s PULSE WIDTH TJ = 25C A
10 100
1 0.1 1
20s PULSE WIDTH TJ = 150C A
10 100
V DS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 3.8A
I D , Drain-to-Source Current (A)
1.5
TJ = 25C TJ = 150C
10
1.0
0.5
1 3.0 3.5 4.0
V DS = 25V 20s PULSE WIDTH
4.5 5.0
A
0.0 -60 -40 -20 0 20 40 60 80
VGS = 10V
100 120 140 160
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRLL2705PBF
1400
1200
1000
800
Coss
600
V GS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = C ds + C gd
20
I D = 3.8A V DS = 44V V DS = 28V
16
C, Capacitance (pF)
12
8
400
Crss
200
4
0 1 10 100
A
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 9
30 40 50
A
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
10s
I D , Drain Current (A)
10 100s
TJ = 150C
10
TJ = 25C
1ms 1 10ms
1 0.4 0.6 0.8 1.0
VGS = 0V
1.2
A
0.1
TA = 25C TJ = 150C Single Pulse
0.1 1 10
A
100
1.4
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLL2705PBF
QG
V DS VGS RG 10V
RD
10V
VG
QGS
QGD
D.U.T.
+
- VDD
Charge
Pulse Width 1 s Duty Factor 0.1 %
Fig 9a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
Fig 10a. Switching Time Test Circuit
VDS
50K 12V .2F .3F
90%
D.U.T. VGS
3mA
+ V - DS
10% VGS
td(on)
IG ID
tr
t d(off)
tf
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
1000
Fig 10b. Switching Time Waveforms
Thermal Response (ZthJA )
100
D = 0.50 0.20
10
0.10 0.05 0.02 0.01
1
P DM
t
0.1
SINGLE PULSE (THERMAL RESPONSE)
1 t2
Notes: 1. Duty factor D = t
1
/t
2
0.01 0.00001
2. Peak TJ = PDM x Z thJA + T A
A
10000
0.0001
0.001
0.01
0.1
1
10
100
1000
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLL2705PBF
EAS , Single Pulse Avalanche Energy (mJ)
250
TOP
200
15V
BOTTOM
ID 1.7A 3.0A 3.8A
VDS
L
DRIVER
150
RG
20V
D.U.T
IAS tp
+ - VDD
A
100
0.01
50
Fig 12a. Unclamped Inductive Test Circuit
0
VDD = 25V
25 50 75 100 125
A
150
V(BR)DSS tp
Starting TJ , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
6
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IRLL2705PBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ V DD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS
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IRLL2705PBF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXF ET PRODUCT MARKING
T HIS IS AN IRF L014
PART NUMBER INT ERNAT IONAL RECT IF IER LOGO
LOT CODE AXXXX
FL014 314P
A = AS S EMBLY S IT E DATE CODE CODE (YYWW) YY = YEAR WW = WEEK P = DES IGNAT ES LEAD-F REE PRODUCT (OPT IONAL)
T OP
BOT TOM
8
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IRLL2705PBF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 0.35 (.013) 0.25 (.010)
TR
2.05 (.080) 1.95 (.077)
7.55 (.297) 7.45 (.294)
7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272)
16.30 (.641) 15.70 (.619)
2.30 (.090) 2.10 (.083)
NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4
330.00 (13.000) MAX.
50.00 (1.969) MIN.
NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
18.40 (.724) MAX. 14.40 (.566) 12.40 (.488)
4
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 05/04
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